Grundlegende Informationen.
Ausgangssignaltyp
Analogausgang
Fertigungsprozess
Integration
Kundenspezifische
Kundenspezifische
Spezifikation
CE, UL, 9001
Herkunft
Ningbo, Zhejiang
Produktbeschreibung
Features;
Open loop Principle
output voltage Signals
Single Power Supply +5V
Isolation Voltage 3kV
Low Power Consumption
PCB mounting platform
Factory calibrated
Advantages
High accuracy
Low Insertion Loss
Compact disign
High Creepage distance
High immunity to external interference
Strong insulation isolation
Low temperature coefficient
Appications
Servo moto drives
Battery supplied application
UPS
SMPS
Power supplies go weiding applicaiton
AC Variable speed drives
MPPT
Specifications and Models |
Primary Nominal current IPN (A) | Primary current measuring range IPM (A) | Connection | Type |
10 | ±25 | PCB | STK-10XP/P1 |
16 | ±40 | PCB | STK-16XP/P1 |
20 | ±50 | PCB | STK-20XP/P1 |
32 | ±80 | PCB | STK-32XP/P1 |
40 | ±100 | PCB | STK-40XP/P1 |
50 | ±125 | PCB | STK-50XP/P1 |
Electrical data STK-10XP/P1
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 10 | | |
Primary current,measuring range | IPM | A | -25 | | 25 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -62.5 | | 62.5 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -0.94 | | 0.94 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 62.5 | | 625mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-16XP/P1
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 16 | | |
Primary current,measuring range | IPM | A | -40 | | 40 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -100 | | 100 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -1.5 | | 1.5 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 625/16 | | 625mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-20XP/P1
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 20 | | |
Primary current,measuring range | IPM | A | -50 | | 50 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -125 | | 125 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -1.88 | | 1.88 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 31.25 | | 625mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-32XP/P1
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 32 | | |
Primary current,measuring range | IPM | A | -80 | | 80 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -200 | | 200 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3 | | 3 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 625/32 | | 625mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-40XP/P1
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 40 | | |
Primary current,measuring range | IPM | A | -100 | | 100 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -250 | | 250 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3.75 | | 3.75 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 15.625 | | 625mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-50XP/P1
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 50 | | |
Primary current,measuring range | IPM | A | -125 | | 125 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -313 | | 313 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.05 | | 0.05 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3.125 | | 3.125 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 12.5 | | 625mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Die Anschrift:
Bulding 10, Floor 2, Zhongguan Road No. 1188, Zhenhai District, Ningbo, Zhejiang, China
Unternehmensart:
Hersteller/Werk
Geschäftsbereich:
Elektronik
Zertifizierung des Managementsystems:
ISO 9001
Firmenvorstellung:
Sinomags ist ein weltweit führender Hersteller von GMR/TMR Wafern, einem hochmodernen Magnetsensor und bietet hervorragende Leistung und hochwertige Lösungen zur Messung elektrischer Parameter. Unsere Innovation liegt auf der Lieferung hoher Genauigkeit, schnellem Ansprechverhalten, kompakten getundeten Stromwandler.
Sinomags wurde 2012 von einem Team von Top-Experten aus dem Bereich Magnetismus-Forschung und der magnetischen Aufzeichnungsindustrie mit einer Topline GMR/TMR Wafer Manufacturing Fab in Euro und aktuellen Schallkopfwerken in Ningbo, China, gegründet.
Mission:
Sinomags hat sich verpflichtet, den
Industrien hochmoderne magnetische Sensortechnologien und -Lösungen zu liefern. Wir arbeiten mit unseren Kunden zusammen, um ihre Probleme zu verstehen und Lösungen zu finden. Und unser Ziel ist es, genau diese Lösung für schwierige Probleme zu finden, die zu Innovationen führen, die sich weltweit verändern.
Innovation:
Sinomags führt vor allem durch technische Innovation und teilt den tiefen Glauben an die Kraft der Technologie. Forschung und Entwicklung sind das Markenzeichen des Erfolgs von sinomags mit unabhängigen Rechten an geistigem Eigentum und mehr als 40 genehmigten Patenten.